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PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
Rev. 02 -- 21 April 2009 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515E.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I I I I I I DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1]
Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp 1 ms IC = 500 mA; IB = 50 mA
[1]
Conditions open base
Min -
Typ 300
Max 15 0.5 1 500
Unit V A A m
Pulse test: tp 300 s; 0.02.
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description base emitter collector
1 2 3 1 2
sym021
Simplified outline
Graphic symbol
3
3. Ordering information
Table 3. Ordering information Package Name PBSS2515E SC-75 Description plastic surface-mounted package; 3 leads Version SOT416 Type number
4. Marking
Table 4. Marking codes Marking code 1Q Type number PBSS2515E
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg
[1] [2]
PBSS2515E_2
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation junction temperature ambient temperature storage temperature
Conditions open emitter open base open collector single pulse; tp 1 ms single pulse; tp 1 ms Tamb 25 C
[1] [2]
Min -65 -65
Max 15 15 6 0.5 1 100 150 250 150 +150 +150
Unit V V V A A mA mW mW C C C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 April 2009
2 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
300 Ptot (mW)
(1)
006aaa412
200
(2)
100
0 0 40 80 120 160 Tamb (C)
(1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Rth(j-sp)
[1] [2]
Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air
[1] [2]
Min -
Typ -
Max 833 500 170
Unit K/W K/W K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
PBSS2515E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 April 2009
3 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 10 0.01 0
006aab472
1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2.
103 Zth(j-a) (K/W) 102
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa413
duty cycle = 1 0.5 0.33 0.2 0.1 0.05 0.02 0.75
10
0.01 0
1 10-5
10-4
10-3
10-2
10-1
1
10
102 t p (s)
103
FR4 PCB, mounting pad for collector 1 cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS2515E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 April 2009
4 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain Conditions VCB = 15 V; IE = 0 A VCB = 15 V; IE = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 100 mA VCE = 2 V; IC = 500 mA VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 200 mA; IB = 10 mA IC = 500 mA; IB = 50 mA RCEsat VBEsat VBEon td tr ton ts tf toff fT Cc
[1]
[1] [1] [1] [1]
Min 200 150 90 -
Typ 300 10 15 25 215 34 249 420 4.4
Max 100 50 100 25 150 250 500 1.1 0.9 6
Unit nA A nA
IEBO hFE
mV mV mV m V V ns ns ns ns ns ns MHz pF
collector-emitter saturation resistance
IC = 500 mA; IB = 50 mA
base-emitter saturation IC = 500 mA; IB = 50 mA voltage base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency collector capacitance VCE = 5 V; IC = 100 mA; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz VCE = 2 V; IC = 100 mA VCC = 11 V; IC = 250 mA; IBon = 12.5 mA; IBoff = -12.5 mA
[1]
[1]
250 -
Pulse test: tp 300 s; 0.02.
PBSS2515E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 April 2009
5 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
800 hFE 600
(1)
006aaa364
1.2 IC (A) 0.8
006aaa370
IB = 5.0 mA 4.5 4.0 3.5 3.0 2.5 2.0 1.5
(3)
(2)
400
0.4
1.0 0.5
200
0 10-1
1
10
102 IC (mA)
103
0 0 1 2 3 4 VCE (V) 5
VCE = 2 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 4.
DC current gain as a function of collector current; typical values
006aaa365
Fig 5.
Collector current as a function of collector-emitter voltage; typical values
1.3
006aaa368
1100 VBE (mV) 900
(1)
VBEsat (V) 0.9
700
(2)
(1) (2)
500
(3)
(3)
0.5 300
100 10-1
1
10
102 IC (mA)
103
0.1 10-1
1
10
102 IC (mA)
103
VCE = 2 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 6.
Base-emitter voltage as a function of collector current; typical values
Fig 7.
Base-emitter saturation voltage as a function of collector current; typical values
PBSS2515E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 April 2009
6 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
1 VCEsat (V) 10-1
006aaa366
1 VCEsat (V) 10-1
006aaa367
(1)
10-2
(1) (2) (3)
10-2
(2)
(3)
10-3 10-1
1
10
102 IC (mA)
103
10-3 10-1
1
10
102 IC (mA)
103
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 8.
Collector-emitter saturation voltage as a function of collector current; typical values
006aaa369
Fig 9.
Collector-emitter saturation voltage as a function of collector current; typical values
006aaa371
102 RCEsat () 10
103 RCEsat () 102
(1)
10
(2)
1
(1) (2) (3)
1
(3)
10-1 10-1
1
10
102 IC (mA)
103
10-1 10-1
1
10
102 IC (mA)
103
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values
Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values
PBSS2515E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 April 2009
7 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
8. Test information
IB 90 % input pulse (idealized waveform) IBon (100 %)
10 %
IBoff
IC 90 %
output pulse (idealized waveform)
IC (100 %)
10 % t td ton tr ts toff tf
006aaa003
Fig 12. BISS transistor switching time definition
VBB VCC
RB (probe) oscilloscope 450 VI R1 R2
RC Vo (probe) 450 DUT oscilloscope
mlb826
VCC = 11 V; IC = 250 mA; IBon = 12.5 mA; IBoff = -12.5 mA
Fig 13. Test circuit for switching times
PBSS2515E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 April 2009
8 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
9. Package outline
1.8 1.4 3 0.45 0.15
0.95 0.60
1.75 0.9 1.45 0.7
1
2 0.30 0.15 1 0.25 0.10 04-11-04
Dimensions in mm
Fig 14. Package outline SOT416 (SC-75)
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS2515E
[1]
Package SOT416
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -115 10000 -135
For further information and the availability of packing methods, see Section 14.
11. Soldering
2.2 1.7
solder lands solder resist 0.85 0.5 (3x) 1 2 solder paste occupied area Dimensions in mm 0.6 (3x) 1.3
sot416_fr
Fig 15. Reflow soldering footprint SOT416 (SC-75)
PBSS2515E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 April 2009
9 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history Release date 20090421 Data sheet status Product data sheet Change notice Supersedes PBSS2515E_1 Document ID PBSS2515E_2 Modifications:
* * * * * * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Figure 2: added Table 6 "Thermal characteristics": enhanced Table 7 "Characteristics": switching times added Figure 8 and 9: amended Section 13 "Legal information": updated Product data sheet -
PBSS2515E_1
20050418
PBSS2515E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 April 2009
10 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS2515E_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 April 2009
11 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 April 2009 Document identifier: PBSS2515E_2

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